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High-k/Metal-gate Devices for Future CMOS Technology
Englisch
218 b
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The present work addresses the investigation of§high-? dielectrics and their applicability in§CMOS-devices, using metal-gate electrodes. The§contents firstly include the deposition of zirconium§dioxide and hafnium dioxide from the gas phase, using§organometallic precursors, and their physico-chemical§characterization. Furthermore, these material systems§are investigated regarding their thermodynamical§stability.§In the following, MOS-capacitors are fabricated by§the selective deposition of gate electrodes made from§aluminum, molybdenum, nickel, or titanium-nitride,§and characterized regarding their electrical behavior. §Results within this work demonstrate that well§balanced and correctly applied annealing of the§devices clearly improves electrical behavior. We§attribute these materials high potential to be§applied in near-future CMOS-technology.
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